Model: Samsung MZ-V5P512BW
Specifications
| Capacity | 512 GB |
| Interface | PCIe 3.0 x4 |
| Form Factor | M.2 2280 |
| Idle Noise | 0 dB |
| Seek Noise | 0 dB |
| Endurance (TBW) | 400 TBW |
| Peak Power Draw | 5.7 Watts |
Performance | |
| Sequential Read (Peak) | Up to 2,500 MB/s |
| Sequential Write (Peak) | Up to 1,500 MB/s |
| Random 4KB Read | Up to 300,000 IOPS |
| Random 4KB Write | Up to 110,000 IOPS |
NAND Type Samsung V-NAND
Controller Samsung UBX controller
Cache Memory Samsung 512 MB Low Power DDR3 SDRAM
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 *C to 70 *C (Measured by SMART Temperature. Proper airflow recommended)
Humidity 5% to 95%, non-condensing
Vibration 20~2000Hz, 20G
Shock 1500G , duration 0.5m sec, 3 axis
